dual igbt s-series module 300 amperes/1200 volts CM300DY-24S 1 11/12 rev. 0 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com description: powerex dual igbt modules are designed for use in switching applications. each module consists of two igbt transistors in a half-bridge configuration with each transistor having a reverse- connected super-fast recovery free-wheel diode. all components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. features: low drive power low v ce(sat) discrete super-fast recovery free-wheel diode isolated baseplate for easy heat sinking applications: ac motor control motion/servo control ups welding power supplies laser power supplies ordering information: example: select the complete module number you desire from the table - i.e. CM300DY-24S is a 1200v (v ces ), 300 ampere dual igbt power module. current rating v ces type amperes volts (x 50) cm 300 24 outline drawing and circuit diagram c2e1 e2 tr 2 di2 di1 c1 e2 (es2) g2 e1 (es1) g1 tr 2 tolerance otherwise specified (mm) the tolerance of size between terminals is assumed to 0.4 division of dimension tolerance 0.5 to 3 0.2 over 3 to 6 0.3 over 6 to 30 0.5 over 30 to 120 0.8 over 120 to 400 1. 2 c2e1 e2 c1 g2 e2 e1 g1 r (4 places) label d v nuts (3 places) k m l c s t t u p q a w q w w x x x q y (tab #110) z aa f f b n g g h j h e dimensions inches millimeters a 4.25 108.0 b 2.44 62.0 c 1.18+0.04/-0.02 30.0+1.0/-0.5 d 3.660.01 93.00.25 e 1.890.01 48.00.25 f 0.29 7.5 g 0.24 6.0 h 0.59 15.0 j 0.689 17.5 k 0.244 6.2 l 0.16 4.0 m 0.56 14.2 n 1.18 30.0 dimensions inches millimeters p 0.79 20.0 q 0.28 7.0 r 0.26 dia. 6.5 dia. s 0.85 21.5 t 0.98 25.0 u 0.94 24.0 v m6 metric m6 w 0.71 18.0 x 0.55 14.0 y 0.02 0.5 z 0.33 8.5 aa 0.87 22.2
CM300DY-24S dual igbt s-series module 300 amperes/1200 volts 2 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 11/12 rev. 0 absolute maximum ratings, t j = 25c unless otherwise specifed characteristics symbol rating units collector-emitter voltage (g-e short-circuited) v ces 1200 volts gate-emitter voltage (c-e short-circuited) v ges 20 volts collector current (dc, t c = 119c) *2,*4 i c 300 amperes collector current (pulse, repetitive) *3 i crm 600 amperes total power dissipation (t c = 25c) *2,*4 p tot 2270 watts emitter current *2 i e *1 300 amperes emitter current (pulse, repetitive) *3 i erm *1 600 amperes isolation voltage (terminals to baseplate, rms, f = 60hz, ac 1 minute) v iso 2500 volts maximum junction temperature t j(max) 175 c maximum case temperature *4 t c(max) 125 c operating junction temperature (under switching) t j(opr) -40 to +150 c storage temperature t stg -40 to +125 c *1 represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (fwdi). *2 junction temperature (t j ) should not increase beyond maximum junction temperature (t j(max) ) rating. *3 pulse width and repetition rate should be such that device junction temperature (t j ) does not exceed t j(max) rating. *4 case temperature (t c ) and heatsink temperature (t s ) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. refer to the figure to the right for chip location. the heatsink thermal resistance should be measured just under the chips. 0 26.8 37.6 0 28.7 42.1 42.2 28.9 0 31.9 45.3 65.9 76.7 45.4 32.1 label side tr1/tr2: igbt di1/di2: fwdi tr1 tr1 tr2 di2 tr2 di2 di1 di1
CM300DY-24S dual igbt s-series module 300 amperes/1200 volts 3 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 11/12 rev. 0 electrical characteristics, t j = 25c unless otherwise specifed characteristics symbol test conditions min. typ. max. units collector-emitter cutoff current i ces v ce = v ces , g-e short-circuited 1 ma gate-emitter leakage current i ges v ge = v ges , c-e short-circuited 0.5 a gate-emitter threshold voltage v ge(th) i c = 30ma, v ce = 10v 5.4 6 6.6 volts collector-emitter saturation voltage v ce(sat) i c = 300a, v ge = 15v, t j = 25c *5 1.85 2.25 volts (terminal) i c = 300a, v ge = 15v, t j = 125c *5 2.05 volts i c = 300a, v ge = 15v, t j = 150c *5 2.10 volts collector-emitter saturation voltage v ce(sat) i c = 300a, v ge = 15v, t j = 25c *5 1.70 2.15 volts (chip) i c = 300a, v ge = 15v, t j = 125c *5 1.90 volts i c = 300a, v ge = 15v, t j = 150c *5 1.95 volts input capacitance c ies 30 nf output capacitance c oes v ce = 10v, g-e short-circuited 6.0 nf reverse transfer capacitance c res 0.5 nf gate charge q g v cc = 600v, i c = 300a, v ge = 15v 700 nc turn-on delay time t d(on) 800 ns rise time t r v cc = 600v, i c = 300a, v ge = 15v, 200 ns turn-off delay time t d(off) r g = 0?, inductive load 600 ns fall time t f 300 ns emitter-collector voltage v ec *1 i e = 300a, v ge = 0v, t j = 25c *5 1.85 2.30 volts (terminal) i e = 300a, v ge = 0v, t j = 125c *5 1.85 volts i e = 300a, v ge = 0v, t j = 150c *5 1.85 volts emitter-collector voltage v ec *1 i e = 300a, v ge = 0v, t j = 25c *5 1.70 2.15 volts (chip) i e = 300a, v ge = 0v, t j = 125c *5 1.70 volts i e = 300a, v ge = 0v, t j = 150c *5 1.70 volts reverse recovery time t rr *1 v cc = 600v, i e = 300a, v ge = 15v 300 ns reverse recovery charge q rr *1 r g = 0?, inductive load 16 c turn-on switching energy per pulse e on v cc = 600v, i c = i e = 300a, 41 mj turn-off switching energy per pulse e off v ge = 15v, r g = 0?, 32 mj reverse recovery energy per pulse e rr *1 t j = 150c, inductive load 22 mj internal lead resistance r cc' + ee' main terminals-chip, 0.9 m? per switch,t c = 25c *2 internal gate resistance r g per switch 6.5 ? *1 represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (fwdi). *5 pulse width and repetition rate should be such as to cause negligible temperature rise.
CM300DY-24S dual igbt s-series module 300 amperes/1200 volts 4 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 11/12 rev. 0 thermal resistance characteristics, t j = 25c unless otherwise specifed characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case *4 r th(j-c) q per igbt 66 k/kw thermal resistance, junction to case *4 r th(j-c) d per ifwdi 120 k/kw contact thermal resistance, r th(c-s) thermal grease applied 20 k/kw case to heatsink *4 (per 1/2 module) *6 mechanical characteristics characteristics symbol test conditions min. typ. max. units mounting torque m t main terminals, m6 screw 31 35 40 in-lb m s mounting to heatsink, m6 screw 31 35 40 in-lb weight m 400 grams flatness of baseplate e c on centerline x, y *7 - 100 + 100 m recommended operating conditons, t a = 25c characteristics symbol test conditions min. typ. max. units (dc) supply voltage v cc applied across c1-e2 600 850 volts gate (-emitter drive) voltage v ge(on) applied across g1-es1 / g2-es2 13.5 15.0 16.5 volts external gate resistance r g per switch 0 14 ? *4 case temperature (t c ) and heatsink temperature (t s ) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. refer to the figure to the right for chip location. the heatsink thermal resistance should be measured just under the chips. *6 typical value is measured by using thermally conductive grease of = 0.9 [w/(m ? k)]. *7 baseplate (mounting side) flatness measurement points (x, y) are shown in the figure below. x ? concave 3 mm + convex ? concave + convex heatsink side heatsink side bottom y 0 26.8 37.6 0 28.7 42.1 42.2 28.9 0 31.9 45.3 65.9 76.7 45.4 32.1 label side tr1/tr2: igbt di1/di2: fwdi tr1 tr1 tr2 di2 tr2 di2 di1 di1
CM300DY-24S dual igbt s-series module 300 amperes/1200 volts 5 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 11/12 rev. 0 0 1.0 0.5 2.5 1.5 2.0 3.0 10 1 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (chip - typical) 10 2 10 3 emitter current, i e , (amperes) gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (chip - typical) 10 6 8 10 14 12 16 18 20 8 6 4 2 0 t j = 25c i c = 600a i c = 300a i c = 120a collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (chip - typical) 0 2 4 6 8 10 0 v ge = 20v 10 11 12 13.5 15 9 t j = 25 c 600 300 400 500 200 100 collector current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts ) collector-emitter saturation voltage characteristics (chip - typical) 3.5 2.5 3.0 0 2.0 1.5 0.5 1.0 0 100 200 300 400 500 600 v ge = 15v t j = 25c t j = 125c t j = 150c t j = 25c t j = 125c t j = 150c
CM300DY-24S dual igbt s-series module 300 amperes/1200 volts 6 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 11/12 rev. 0 collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (typical) 10 0 10 2 10 2 10 1 10 0 10 -2 10 -1 10 1 v ge = 0v c ies c oes c res 10 -1 collector current, i c , (amperes) 10 3 10 1 10 2 10 2 10 1 switching time, (ns) half-bridge switching characteristics (typical) t d(off) t d(on) t r v cc = 600v v ge = 15v r g = 0 t j = 125c inductive load t f 10 3 collector current, i c , (amperes) 10 3 10 1 10 2 10 2 10 1 switching time, (ns) half-bridge switching characteristics (typical) t d(off) t d(on) t r v cc = 600v v ge = 15v r g = 0 t j = 150c inductive load t f 10 3 gate resistance, r g , ( ) 10 3 10 -1 10 0 10 1 10 1 10 2 10 4 10 2 10 3 switching time, t d(on) , t r (ns) switching time, t d(off) , t f (ns) switching time vs. gate resistance (typical) t d(off) t d(on) t r inductive load v cc = 600v v ge = 15v i c = 300a t j = 125c t f 10 2
CM300DY-24S dual igbt s-series module 300 amperes/1200 volts 7 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 11/12 rev. 0 gate charge, q g , (nc) gate-emitter voltage, v ge , (volts) gate charge vs. v ge 20 0 15 10 5 0 200 400 600 800 1000 v cc = 600v i c = 300a t j = 25c emitter current, i e , (amperes) reverse recovery characteristics (typical) 10 3 10 1 10 2 10 2 10 1 10 3 v cc = 600v v ge = 15v r g = 0 t j = 125c inductive load i rr t rr reverse recovery, i rr (a), t rr (ns) emitter current, i e , (amperes) reverse recovery characteristics (typical) 10 3 10 1 10 2 10 2 10 1 10 3 v cc = 600v v ge = 15v r g = 0 t j = 150c inductive load i rr t rr reverse recovery, i rr (a), t rr (ns) switching time, t d(on) , t r (ns) 10 4 10 2 10 3 switching time, t d(off) , t f (ns) inductive load v cc = 600v v ge = 15v i c = 300a t j = 150c gate resistance, r g , ( ) 10 3 10 -1 10 0 10 1 10 1 10 2 switching time vs. gate resistance (typical) t d(off) t d(on) t r t f 10 2
CM300DY-24S dual igbt s-series module 300 amperes/1200 volts 8 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 11/12 rev. 0 gate resistance, r g , ( ) switching energy, e on , e off , (mj) reverse recivery energy, e rr , (mj) 10 2 10 -2 10 -1 10 0 10 1 10 1 10 0 10 2 half-bridge switching characteristics (typical) v cc = 600v v ge = 15v r g = 0 t j = 125c v cc = 600v v ge = 15v i c /i e = 300a t j = 125c collector current, i c , (amperes) emitter current, i e , (amperes) switching energy, e on , e off , (mj/pulse) reverse recivery energy, e rr , (mj/pulse) 10 2 10 1 10 1 10 2 10 0 10 3 half-bridge switching characteristics (typical) e on e off e rr v cc = 600v v ge = 15v r g = 0 t j = 150c collector current, i c , (amperes) emitter current, i e , (amperes) switching energy, e on , e off , (mj/pulse) reverse recivery energy, e rr , (mj/pulse) 10 2 10 1 10 1 10 2 10 0 10 3 half-bridge switching characteristics (typical) e on e off e rr gate resistance, r g , ( ) switching energy, e on , e off , (mj) reverse recivery energy, e rr , (mj) 10 2 10 -2 10 -1 10 0 10 1 10 1 10 0 10 2 half-bridge switching characteristics (typical) v cc = 600v v ge = 15v i c /i e = 300a t j = 150c e on e off e rr e on e off e rr
CM300DY-24S dual igbt s-series module 300 amperes/1200 volts 9 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 11/12 rev. 0 time, (s) transient thermal impedance characteristics (maximum) 10 0 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 -2 10 -3 z th = r th ? (normalized value) single pulse t c = 25c per unit base = r th(j-c) = 66 k/kw (igbt) r th(j-c) = 120 k/kw (fwdi) normalized transient thermal impedance, z th(j-c')
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